Intersil Corporation HGTP6N40E1D | 搜芯易Sourcengine

Intersil Corporation HGTP6N40E1D

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 7.5A I(C), 400V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-609 Code
e0
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
7.5 A
Power Dissipation-Max (Abs)
75 W
Gate-emitter Thr Voltage-Max
4.5 V
Collector-emitter Voltage-Max
400 V