HGTP1N120CN
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS, AVALANCHE RATED
- Fall Time-Max (tf)450 ns
- Number of Elements1
- Rise Time-Max (tr)15 ns
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)24 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)540 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)6.2 A
- Power Dissipation-Max (Abs)60 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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HGTP1N120CN