FAIRCHILD SEMICONDUCTOR CORP HGTP14N36G3VL | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP HGTP14N36G3VL

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transisto
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AUTOMOTIVE IGNITION
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
100
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
12
Turn-off Time-Nom (toff) (ns)
7000
Collector Current-Max (IC) (A)
18
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
2.2
Collector-emitter Voltage-Max (V)
350