HARRIS SEMICONDUCTOR HGTP14N36G3VL | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HGTP14N36G3VL

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-220AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
AUTOMOTIVE IGNITION
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2.2
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
VOLTAGE CLAMPING
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
10
Collector Current-Max (IC) (A)
18
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
2.2
Power Dissipation Ambient-Max (W)
100