FAIRCHILD SEMICONDUCTOR CORP HGTP12N60C3DR | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP HGTP12N60C3DR

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
48 ns
Turn-off Time-Nom (toff)
480 ns
Collector Current-Max (IC)
24 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V