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HGTP12N60C3D

ONSEMI

HGTP12N60C3D 产品规格书
ONSEMI HGTP12N60C3D
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • VCEsat-Max
    2.2 V
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-220AB
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Case Connection
    COLLECTOR
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Additional Feature
    RC-IGBT
  • Fall Time-Max (tf)
    275 ns
  • Number of Elements
    1
  • Number of Terminals
    3
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Application
    POWER CONTROL
  • Turn-on Time-Nom (ton)
    48 ns
  • Gate-emitter Voltage-Max
    20 V
  • Turn-off Time-Max (toff)
    675 ns
  • Turn-off Time-Nom (toff)
    480 ns
  • Operating Temperature-Max
    150 Cel
  • Operating Temperature-Min
    -40 Cel
  • Collector Current-Max (IC)
    24 A
  • Power Dissipation-Max (Abs)
    104 W
  • Transistor Element Material
    SILICON
  • Gate-emitter Thr Voltage-Max
    6 V
  • Collector-emitter Voltage-Max
    600 V

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