Intersil Corporation HGTP12N60A4D | 搜芯易Sourcengine

Intersil Corporation HGTP12N60A4D

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
18
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
8
Power Dissipation-Max (W)
167
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
33
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
180
Collector Current-Max (IC) (A)
54
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5.6
Collector-emitter Voltage-Max (V)
600