FAIRCHILD SEMICONDUCTOR CORP HGTG30N60A4D | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP HGTG30N60A4D

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT Transistors 600V N-Channel IGBT SMPS Series
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
Single
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
70
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
463
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
35
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
238
Collector Current-Max (IC) (A)
75
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
600
Width
IGBTs
Length
15.87 mm