ONSEMI HGTG20N60C3 | 搜芯易Sourcengine

ONSEMI HGTG20N60C3

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1.8 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (tf)
210 ns
Number of Elements
1
Rise Time-Max (tr)
28 ns
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Max (ton)
60 ns
Turn-on Time-Nom (ton)
52 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Max (toff)
660 ns
Turn-off Time-Nom (toff)
388 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
45 A
Power Dissipation-Max (Abs)
164 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.3 V
Collector-emitter Voltage-Max
600 V