HGTG20N120CN
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态EOL
- 说明IGBT Transistors
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-247
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS, AVALANCHE RATED
- Fall Time-Max (tf)400 ns
- Number of Elements1
- Rise Time-Max (tr)22 ns
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)38 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)565 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)63 A
- Power Dissipation-Max (Abs)390 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
HGTG20N120CN有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
HGTG20N120CN