HGTG18N120BND

ONSEMI

ONSEMI HGTG18N120BND
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-247
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    200 ns
  • Number of Elements
    1
  • Rise Time-Max (tr)
    22 ns
  • Number of Terminals
    3
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Application
    MOTOR CONTROL
  • Turn-on Time-Nom (ton)
    38 ns
  • Gate-emitter Voltage-Max
    20 V
  • Turn-off Time-Nom (toff)
    345 ns
  • Operating Temperature-Max
    150 Cel
  • Collector Current-Max (IC)
    54 A
  • Power Dissipation-Max (Abs)
    390 W
  • Transistor Element Material
    SILICON
  • Collector-emitter Voltage-Max
    1200 V

HGTG18N120BND有0家供应商货源可供购买或竞价

提交询价

您的询价单将直接发送给我们的销售专家: Pari

提交询价
HGTG18N120BND
提交询价
HGTG18N120BND