HGTG18N120BND
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明IGBT 1200V 54A 390W TO247
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)200 ns
- Number of Elements1
- Rise Time-Max (tr)22 ns
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)38 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)345 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)54 A
- Power Dissipation-Max (Abs)390 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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HGTG18N120BND