Intersil Corporation HGTG12N60A4S | 搜芯易Sourcengine

Intersil Corporation HGTG12N60A4S

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-609 Code
e0
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
54 A
Power Dissipation-Max (Abs)
167 W
Collector-emitter Voltage-Max
600 V