HGTG12N60A4
ONSEMI
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.7 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-247
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Fall Time-Max (tf)95 ns
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)33 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Max (toff)265 ns
- Turn-off Time-Nom (toff)180 ns
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)54 A
- Power Dissipation-Max (Abs)167 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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HGTG12N60A4