HARRIS SEMICONDUCTOR HGTD8P50G1S | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HGTD8P50G1S

生命周期状态
Active
说明
8A, 500V P-CHANNEL IGBT
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
VCEsat-Max (V)
3.7
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
2500
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
66
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Max (toff) (ns)
680
Turn-off Time-Nom (toff) (ns)
480
Collector Current-Max (IC) (A)
12
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
500
Power Dissipation Ambient-Max (W)
66