Intersil Corporation HGTD8P50G1 | 搜芯易Sourcengine

Intersil Corporation HGTD8P50G1

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, P-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-609 Code
e0
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Fall Time-Max (tf)
2500 ns
Polarity/Channel Type
P-CHANNEL
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
12 A
Power Dissipation-Max (Abs)
66 W
Gate-emitter Thr Voltage-Max
6 V
Collector-emitter Voltage-Max
500 V