HGTD7N60C3
HARRIS SEMICONDUCTOR
- 生命周期状态Active
- 说明14A, 600V, N-CHANNEL IGBT
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-251AA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Fall Time-Max (tf)275 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)20 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)490 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)14 A
- Power Dissipation-Max (Abs)60 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
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HGTD7N60C3