HGTD1N120CNS
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-252AA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-252AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS, AVALANCHE RATED
- Fall Time-Max (ns)450
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)15
- Power Dissipation-Max (W)60
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)24
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)540
- Collector Current-Max (IC) (A)6.2
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)1200
HGTD1N120CNS有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
HGTD1N120CNS