FAIRCHILD SEMICONDUCTOR CORP HGTD1N120BNS9A | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP HGTD1N120BNS9A

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
IGBTs 5.3a 1200v N-Ch IGBT NPT Series
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
MOTOR CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
Single
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS, AVALANCHE RATED
Fall Time-Max (ns)
370
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
14
Power Dissipation-Max (W)
60
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
24
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
333
Collector Current-Max (IC) (A)
5.3
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
30
Width
6.1 mm
Length
6.6 mm