HGTD1N120BNS
ONSEMI
- 生命周期状态Active
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-252AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- VCEsat-Max (V)2.9
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Fall Time-Max (ns)370
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)15
- Power Dissipation-Max (W)60
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)32
- Turn-on Time-Nom (ton) (ns)24
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Max (toff) (ns)458
- Turn-off Time-Nom (toff) (ns)333
- Collector Current-Max (IC) (A)5.3
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Collector-emitter Voltage-Max (V)1200
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HGTD1N120BNS