HARRIS SEMICONDUCTOR HGT1S7N60C3DS9A | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HGT1S7N60C3DS9A

生命周期状态
Active
RoHS
符合RoHS标准
说明
14A, 600V, UFS N-CHANNEL IGBT W/
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
MOTOR CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
2
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
275
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
8.5
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Max (toff) (ns)
400
Turn-off Time-Nom (toff) (ns)
350
Collector Current-Max (IC) (A)
14
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600
Power Dissipation Ambient-Max (W)
60