ONSEMI HGT1S7N60B3DS | 搜芯易Sourcengine

ONSEMI HGT1S7N60B3DS

生命周期状态
Active
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
2.1
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (ns)
175
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
60
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
46
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Max (toff) (ns)
470
Turn-off Time-Nom (toff) (ns)
350
Collector Current-Max (IC) (A)
14
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600