HGT1S7N60A4DS
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明IGBT 600V 34A 125W TO263AB
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- VCEsat-Max (V)2.7
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (ns)85
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)125
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)17
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)235
- Turn-off Time-Nom (toff) (ns)205
- Collector Current-Max (IC) (A)34
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Gate-emitter Thr Voltage-Max (V)7
- Collector-emitter Voltage-Max (V)600
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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HGT1S7N60A4DS