HARRIS SEMICONDUCTOR HGT1S3N60B3 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HGT1S3N60B3

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-262AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
33
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
16
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
220
Collector Current-Max (IC) (A)
7
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600