HGT1S2N120CN
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明N-CHANNEL IGBT
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-262AA
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee3
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS, AVALANCHE RATED
- Fall Time-Max (ns)320
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)15
- Power Dissipation-Max (W)104
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)32
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)585
- Collector Current-Max (IC) (A)13
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)1200
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HGT1S2N120CN