HGT1S20N60C3S9A
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明IGBT 600V 45A TO263AB
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max1.8 V
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-263AB
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Fall Time-Max (tf)210 ns
- Number of Elements1
- Rise Time-Max (tr)28 ns
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Max (ton)60 ns
- Turn-on Time-Nom (ton)52 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Max (toff)660 ns
- Turn-off Time-Nom (toff)388 ns
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)45 A
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)164 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.3 V
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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HGT1S20N60C3S9A