HGT1S20N60C3R
HARRIS SEMICONDUCTOR
- 生命周期状态Active
- 说明40A, 600V, RUGGED N-CHANNEL IGBT
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-262AA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS, ULTRA FAST SWITCHING
- Fall Time-Max (tf)400 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)34 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)390 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)40 A
- Power Dissipation-Max (Abs)164 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max7.5 V
- Collector-emitter Voltage-Max600 V
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HGT1S20N60C3R