HARRIS SEMICONDUCTOR HGT1S20N35G3VLS9A | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HGT1S20N35G3VLS9A

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
2.8 V
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
VOLTAGE CLAMPING
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
AUTOMOTIVE IGNITION
Gate-emitter Voltage-Max
10 V
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
20 A
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
2.3 V
Collector-emitter Voltage-Max
320 V
Power Dissipation Ambient-Max
150 W