HARRIS SEMICONDUCTOR HGT1S15N120C3S9A | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HGT1S15N120C3S9A

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
42 ns
Turn-off Time-Nom (toff)
820 ns
Collector Current-Max (IC)
35 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V