FAIRCHILD SEMICONDUCTOR CORP HGT1S14N41G3VLST | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP HGT1S14N41G3VLST

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 25A I(C), 445V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
AUTOMOTIVE IGNITION
Turn-on Time-Nom (ton)
3450 ns
Turn-off Time-Nom (toff)
9000 ns
Collector Current-Max (IC)
25 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
445 V