Intersil Corporation HGT1S14N37G3VLS | 搜芯易Sourcengine

Intersil Corporation HGT1S14N37G3VLS

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 25A I(C), N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AUTOMOTIVE IGNITION
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
7000
Power Dissipation-Max (W)
136
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
4000
Gate-emitter Voltage-Max (V)
12
Turn-off Time-Nom (toff) (ns)
10000
Collector Current-Max (IC) (A)
25
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
2.2