Intersil Corporation HGT1S12N60B3 | 搜芯易Sourcengine

Intersil Corporation HGT1S12N60B3

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-609 Code
e0
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Fall Time-Max (tf)
175 ns
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
27 A
Power Dissipation-Max (Abs)
104 W
Gate-emitter Thr Voltage-Max
6 V
Collector-emitter Voltage-Max
600 V