ONSEMI HGT1S12N60A4S9A | 搜芯易Sourcengine

ONSEMI HGT1S12N60A4S9A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.7 V
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (tf)
95 ns
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
33 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Max (toff)
265 ns
Turn-off Time-Nom (toff)
180 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
54 A
Power Dissipation-Max (Abs)
167 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V