ONSEMI HGT1S10N120BNS | 搜芯易Sourcengine

ONSEMI HGT1S10N120BNS

生命周期状态
EOL
RoHS
符合RoHS标准
说明
ONSEMI - HGT1S10N120BNS - TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB RoHS Compliant: Yes
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
4.2
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
200
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
15
Power Dissipation-Max (W)
298
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
40
Turn-on Time-Nom (ton) (ns)
32
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
450
Turn-off Time-Nom (toff) (ns)
330
Collector Current-Max (IC) (A)
35
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
30