HGT1E50N60E2HB
Intersil Corporation
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max3 V
- Number of Elements1
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)50 A
- Power Dissipation-Max (Abs)180 W
- Collector-emitter Voltage-Max600 V
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HGT1E50N60E2HB