HARRIS SEMICONDUCTOR HFA3127MJ/883 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR HFA3127MJ/883

生命周期状态
Active
说明
HFA3127MJ/883
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-GDIP-T16
Configuration
SEPARATE, 5 ELEMENTS
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
5
Number of Terminals
16
Package Body Material
CERAMIC, GLASS-SEALED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.0113
Collector-emitter Voltage-Max (V)
8
Transition Frequency-Nom (fT) (MHz)
8000
Screening Level / Reference Standard
MILITARY STANDARD (USA)