ASI Semiconductor, Inc. HF125-28 | 搜芯易Sourcengine

ASI Semiconductor, Inc. HF125-28

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, Silicon, PNP
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRFM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
270
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
200