Hitachi, Ltd. HB56A19B-15 | 搜芯易Sourcengine

Hitachi, Ltd. HB56A19B-15

生命周期状态
Discontinued
说明
DRAM Module, 1MX9, 150ns, CMOS
类别
Semiconductors Memory ICs DRAMs DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Access Mode
PAGE
JESD-30 Code
R-XSMA-N30
Memory Width
9
Organization
1MX9
Package Code
SIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
9437184 bit
Memory IC Type
DRAM MODULE
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Terminal Pitch
2.54 mm
Access Time-Max
150 ns
Number of Ports
1
Number of Words
1048576 words
Seated Height-Max
20.447 mm
Temperature Grade
COMMERCIAL
Terminal Position
SINGLE
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Supply Current-Max
360 mA
Number of Functions
1
Number of Terminals
30
Standby Current-Max
0.009 Amp
Number of Words Code
1M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Package Equivalence Code
SIM30
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V