Hitachi, Ltd. HB54A5129F1-B75B | 搜芯易Sourcengine

Hitachi, Ltd. HB54A5129F1-B75B

生命周期状态
Transferred
说明
DDR DRAM Module, 64MX4, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
4
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
133.35
JESD-30 Code
R-XDMA-N184
Memory Width
4
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM
Memory Organization
64MX4
Number of Functions
1
Number of Terminals
184
Terminal Pitch (mm)
1.27
Number of Words Code
64M
Memory Density (bits)
268435456
Package Body Material
UNSPECIFIED
Seated Height-Max (mm)
43.18
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
67108864
Operating Temperature-Max (Cel)
55
Operating Temperature-Min (Cel)
0