Hitachi, Ltd. HB52E169E12-A6D | 搜芯易Sourcengine

Hitachi, Ltd. HB52E169E12-A6D

生命周期状态
Discontinued
说明
Synchronous DRAM Module, 16MX4, 6.9ns, CMOS
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Width
4 mm
Length
133.595 mm
Technology
CMOS
Access Mode
SINGLE BANK PAGE BURST
JESD-30 Code
R-XDMA-N168
Memory Width
4
Organization
16MX4
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
Operating Mode
SYNCHRONOUS
Terminal Pitch
1.27 mm
Access Time-Max
6.9 ns
Number of Ports
1
Number of Words
16777216 words
Seated Height-Max
43.18 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM
Number of Functions
1
Number of Terminals
168
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Operating Temperature-Max
55 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V