Hitachi, Ltd. HA22012 | 搜芯易Sourcengine

Hitachi, Ltd. HA22012

生命周期状态
Discontinued
说明
Narrow Band Low Power Amplifier, GAAS
类别
Semiconductors RF/Microwave Devices RF/Microwave Amplifiers NARROW BAND LOW POWER

Technology
GAAS
JESD-609 Code
e0
Power Supplies
3 V
Terminal Finish
Tin/Lead (Sn/Pb)
Mounting Feature
SURFACE MOUNT
Supply Current-Max
5.5 mA
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
TSOP5/6,.11,37
RF/Microwave Device Type
NARROW BAND LOW POWER
Operating Temperature-Max
70 Cel
Operating Temperature-Min
-20 Cel