SK Hynix H5TQ4G83MMR-S6C | 搜芯易Sourcengine

SK Hynix H5TQ4G83MMR-S6C

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3 DRAM, 256MX8, CMOS, PBGA82
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
12.2
Access Mode
MULTI BANK PAGE BURST
Length (mm)
13.3
JESD-30 Code
R-PBGA-B82
Memory Width
8
Package Code
LFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
256MX8
Number of Functions
1
Number of Terminals
82
Terminal Pitch (mm)
0.8
Number of Words Code
256M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.35
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
268435456
Package Equivalence Code
BGA82,11X13,32
Clock Frequency-Max (MHz)
400
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
20