H5DU2562GFR-E3I
SK Hynix
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR1 DRAM, 16MX16, 0.7ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- Width8 mm
- Length12 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Organization16MX16
- Package CodeVBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density268435456 bit
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch1 mm
- Access Time-Max0.7 ns
- Number of Ports1
- Number of Words16777216 words
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Seated Height-Max1 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max210 mA
- Number of Functions1
- Number of Terminals60
- Standby Current-Max0.004 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeBGA60,9X12,40/32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.3 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)200 MHz
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)20
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H5DU2562GFR-E3I