SK Hynix H5ANBG8NABR-TFC | 搜芯易Sourcengine

SK Hynix H5ANBG8NABR-TFC

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR4 DRAM, 4GX8, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR

I/O Type
COMMON
Technology
CMOS
Access Mode
MULTI BANK PAGE BURST
Length (mm)
10.2
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Memory Organization
4GX8
Number of Functions
1
Number of Terminals
78
Terminal Pitch (mm)
0.8
Number of Words Code
4G
Memory Density (bits)
34359738368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.26
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
4294967296
Sequential Burst Length
4,8
Standby Current-Max (A)
4.0E-5
Interleaved Burst Length
4,8
Package Equivalence Code
BGA78,6X13,32
Clock Frequency-Max (MHz)
1066
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0