Toshiba Corporation GT8G151 | 搜芯易Sourcengine

Toshiba Corporation GT8G151

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
2400
Turn-off Time-Nom (toff) (ns)
2200
Collector-emitter Voltage-Max (V)
400