Toshiba Corporation GT8G132 | 搜芯易Sourcengine

Toshiba Corporation GT8G132

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 8A I(C), 400V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Nom (ton)
1100 ns
Gate-emitter Voltage-Max
6 V
Turn-off Time-Nom (toff)
2200 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
1.1 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
400 V