Toshiba Corporation GT8G103(SM) | 搜芯易Sourcengine

Toshiba Corporation GT8G103(SM)

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 8A I(C), 400V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
YES
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
6 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
20 W
Collector-emitter Voltage-Max
400 V