Toshiba Corporation GT60M303 | 搜芯易Sourcengine

Toshiba Corporation GT60M303

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2.7
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Fall Time-Max (ns)
400
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
600
Power Dissipation-Max (W)
170
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
460
Gate-emitter Voltage-Max (V)
25
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
600
Collector Current-Max (IC) (A)
60
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
900
Power Dissipation Ambient-Max (W)
170
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED