Toshiba Corporation GT60J323H(Q) | 搜芯易Sourcengine

Toshiba Corporation GT60J323H(Q)

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Fall Time-Max (tf)
210 ns
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
25 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
170 W
Collector-emitter Voltage-Max
600 V