Toshiba Corporation GT50J342 | 搜芯易Sourcengine

Toshiba Corporation GT50J342

生命周期状态
EOL
说明
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
270 ns
Gate-emitter Voltage-Max
25 V
Turn-off Time-Nom (toff)
380 ns
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
80 A
Power Dissipation-Max (Abs)
394 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V