Toshiba Corporation GT50J122 | 搜芯易Sourcengine

Toshiba Corporation GT50J122

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Fall Time-Max (tf)
260 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
230 ns
Gate-emitter Voltage-Max
25 V
Turn-off Time-Nom (toff)
410 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
50 A
Power Dissipation-Max (Abs)
156 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V